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d a t a sh eet product speci?cation supersedes data of 2000 dec 04 2001 apr 25 discrete semiconductors BF1203 dual n-channel dual gate mos-fet a ndbook, halfpage mbd128
2001 apr 25 2 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 features two low noise gain controlled amplifiers in a single package superior cross-modulation performance during agc high forward transfer admittance high forward transfer admittance to input capacitance ratio. applications gain controlled low noise amplifiers for vhf and uhf applications with 3 to 9 v supply voltage, such as digital and analog television tuners and professional communications equipment. description the BF1203 is a combination of two different dual gate mos-fet amplifiers with shared source and gate 2 leads. the source and substrate are interconnected. internal bias circuits enable dc stabilization and a very good cross-modulation performance during agc. integrated diodes between the gates and source protect against excessive input voltage surges. the transistor is encapsulated in a sot363 micro-miniature plastic package. pinning - sot363 pin description 1 gate 1 (a) 2 gate 2 3 drain (a) 4 drain (b) 5 source 6 gate 1 (b) handbook, halfpage mbl254 top view 13 2 4 5 6 amp a amp b d (a) s d (b) g1 (a) g2 g1 (b) fig.1 simplified outline and symbol. marking code: l2- quick reference data symbol parameter conditions min. typ. max. unit per mos-fet unless otherwise speci?ed v ds drain-source voltage -- 10 v i d drain current (dc) -- 30 ma ? y fs ? forward transfer admittance amp. a: i d =15ma 232835ms amp. b: i d =12ma 253040ms c ig1-s input capacitance at gate 1 amp. a: i d = 15 ma; f = 1 mhz - 2.6 3.1 pf amp. b: i d = 12 ma; f = 1 mhz - 1.7 2.2 pf c rss reverse transfer capacitance f = 1 mhz - 15 - ff nf noise ?gure amp. a: f = 400 mhz; i d =15ma - 1 1.8 db amp. b: f = 800 mhz; i d =12ma - 1.1 1.8 db x mod cross-modulation amp. a: input level for k = 1% at 40 db agc 105 -- db m v amp. b: input level for k = 1% at 40 db agc 100 105 - db m v caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a and snw-fq-302b.
2001 apr 25 3 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. t s is the temperature at the soldering point of the source lead. thermal characteristics symbol parameter conditions min. max. unit per mos-fet unless otherwise speci?ed v ds drain-source voltage - 10 v i d drain current (dc) - 30 ma i g1 gate 1 current - 10 ma i g2 gate 2 current - 10 ma p tot total power dissipation t s 102 c; note 1 - 200 mw t stg storage temperature - 65 +150 c t j operating junction temperature - 150 c symbol parameter value unit r th j-s thermal resistance from junction to soldering point 240 k/w handbook, halfpage 0 50 100 200 250 0 200 mgs359 150 150 100 50 t s ( c) p tot (mw) fig.2 power derating curve.
2001 apr 25 4 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 static characteristics t j =25 c unless otherwise speci?ed. note 1. r g1 connects gate 1 to v gg =5v. symbol parameter conditions min. max. unit per mos-fet unless otherwise speci?ed v (br)dss drain-source breakdown voltage v g1-s =v g2-s = 0; i d =10 m a10 - v v (br)g1-ss gate-source breakdown voltage v gs =v ds = 0; i g1-s =10ma 6 10 v v (br)g2-ss gate-source breakdown voltage v gs =v ds = 0; i g2-s =10ma 6 10 v v (f)s-g1 forward source-gate voltage v g2-s =v ds = 0; i s-g1 = 10 ma 0.5 1.5 v v (f)s-g2 forward source-gate voltage v g1-s =v ds = 0; i s-g2 = 10 ma 0.5 1.5 v v g1-s(th) gate-source threshold voltage v ds =5v; v g2-s =4v; i d = 100 m a 0.3 1 v v g2-s(th) gate-source threshold voltage v ds =5v; v g1-s =4v; i d = 100 m a 0.3 1.2 v i dsx drain-source current amp. a: v g2-s =4v; v ds =5v; r g =62k w; note 1 11 19 ma amp. b: v g2-s =4v; v ds =5v; r g = 120 k w; note 1 816ma i g1-s gate cut-off current v g1-s =5v; v g2-s =v ds =0 - 50 na i g2-s gate cut-off current v g2-s =5v; v g1-s =v ds =0 - 20 na
2001 apr 25 5 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 dynamic characteristics amplifier a common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 15 ma; unless otherwise speci?ed. notes 1. calculated from measured s-parameters. 2. measured in fig.35 test circuit. symbol parameter conditions min. typ. max. unit ? y fs ? forward transfer admittance pulsed; t j =25 c 232835ms c ig1-ss input capacitance at gate 1 f = 1 mhz - 2.6 3.1 pf c ig2-ss input capacitance at gate 2 f = 1 mhz - 3 - pf c oss output capacitance f = 1 mhz - 0.9 - pf c rss reverse transfer capacitance f = 1 mhz - 15 30 ff f noise ?gure f = 10.7 mhz; g s = 20 ms; b s =0 - 57db f = 400 mhz; y s =y s opt - 1 1.8 db f = 800 mhz; y s =y s opt - 1.9 2.5 db g tr power gain f = 200 mhz; g s = 2 ms; b s =b s opt ; g l = 0.5 ms; b l =b l opt ; note 1 - 32.5 - db f = 400 mhz; g s = 2 ms; b s =b s opt ; g l = 1 ms; b l =b l opt ; note 1 - 27 - db f = 800 mhz; g s = 3.3 ms; b s =b s opt ; g l = 1 ms; b l =b l opt ; note 1 - 21 - db x mod cross-modulation input level for k = 1%; f w = 50 mhz; f unw = 60 mhz; note 2 at 0 db agc 90 -- db m v at 10 db agc - 95 - db m v at 40 db agc 105 -- db m v
2001 apr 25 6 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, halfpage 0 2.5 25 0 5 10 15 20 0.5 1 1.5 2 v g1-s (v) i d (ma) mcd935 v g2-s = 4 v 3.5 v 3 v 2.5 v 2 v 1.5 v 1 v fig.3 transfer characteristics; typical values. amplifier a v ds =5v. t j =25 c. handbook, halfpage 010 24 0 8 16 2 v ds (v) i d (ma) 6 48 mcd936 v g1-s = 1.8 v 1.7 v 1.5 v 1.6 v 1.4 v 1.3 v 1.2 v fig.4 output characteristics; typical values. amplifier a v g2-s =4v. t j =25 c. handbook, halfpage 0 2.5 100 0 20 40 60 80 0.5 1 1.5 2 v g1-s (v) i g1 ( m a) mcd937 v g2-s = 4 v 3.5 v 3 v 2.5 v 2 v 1.5 v fig.5 gate 1 current as a function of gate 1 voltage; typical values. amplifier a v ds =5v. t j =25 c. handbook, halfpage 0 i d (ma) 525 40 30 10 0 20 10 15 20 mcd938 y fs (ms) 3.5 v 2.5 v 3 v 2 v v g2-s = 4 v fig.6 forward transfer admittance as a function of drain current; typical values. amplifier a v ds =5v. t j =25 c.
2001 apr 25 7 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, halfpage 0 i g1 ( m a) 10 50 16 12 4 0 8 20 30 40 mcd939 i d (ma) fig.7 drain current as a function of gate 1 current; typical values. amplifier a v ds = 5 v; v g2-s =4v. t j =25 c. handbook, halfpage 05 20 0 4 8 12 16 1234 v gg (v) i d (ma) mcd940 fig.8 drain current as a function of gate 1 supply voltage (= v gg ); typical values. amplifier a v ds = 5 v; v g2-s = 4 v; t j =25 c. r g1 =62k w (connected to v gg ); see fig.35. handbook, halfpage 010 25 0 5 10 15 20 2468 v gg = v ds (v) i d (ma) mcd941 r g1 = 39 k w 47 k w 56 k w 62 k w 68 k w 82 k w 100 k w fig.9 drain current as a function of gate 1 (= v gg ) and drain supply voltage; typical values. amplifier a v g2-s = 4 v; t j =25 c. r g1 connected to v gg ; see fig.35. handbook, halfpage 0246 v g2-s (v) i d (ma) 20 0 16 12 8 4 mcd942 v gg = 5 v 4.5 v 4 v 3.5 v 3 v amplifier a v ds = 5 v; t j =25 c. r g1 =62k w (connected to v gg ); see fig.35. fig.10 drain current as a function of gate 2 voltage; typical values.
2001 apr 25 8 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, halfpage 0246 60 0 20 40 mcd943 v g2-s (v) i g1 ( m a) 4 v 3.5 v 3 v 4.5 v v gg = 5 v fig.11 gate 1 current as a function of gate 2 voltage; typical values. amplifier a v ds = 5 v; t j =25 c. r g1 =62k w (connected to v gg ); see fig.35. handbook, halfpage 012 4 0 - 50 - 10 3 v agc (v) gain reduction (db) - 20 - 30 - 40 mcd944 fig.12 typical gain reduction as a function of the agc voltage; see fig.35. amplifier a v ds = 5 v; v gg = 5 v; r g1 =62k w ; f = 50 mhz; t amb =25 c. handbook, halfpage 0 gain reduction (db) 10 50 120 110 90 80 100 20 30 40 mcd945 v unw (db m v) fig.13 unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see fig.35. amplifier a v ds = 5 v; v gg = 5 v; r g1 =62k w ; f = 50 mhz; f unw = 60 mhz; t amb =25 c. handbook, halfpage 050 20 0 4 8 12 16 10 20 30 40 gain reduction (db) i d (ma) mcd946 fig.14 drain current as a function of gain reduction; typical values; see fig.35. amplifier a v ds = 5 v; v gg = 5 v; r g1 =62k w ; f = 50 mhz; t amb =25 c.
2001 apr 25 9 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, halfpage mgt588 10 2 10 1 10 - 1 10 10 2 10 3 f (mhz) y is (ms) b is g is fig.15 input admittance as a function of frequency; typical values. amplifier a v ds = 5 v; v g2 =4v. i d = 15 ma; t amb =25 c. handbook, halfpage mgt589 10 3 10 2 10 1 10 10 2 10 3 f (mhz) - 10 2 - 10 - 1 j rs (deg) - 10 3 | y rs | ( m s) j rs | y rs | fig.16 reverse transfer admittance and phase as a function of frequency; typical values. amplifier a v ds = 5 v; v g2 =4v. i d = 15 ma; t amb =25 c. handbook, halfpage mgt590 10 2 10 1 - 10 2 - 10 - 1 10 10 2 10 3 f (mhz) | y fs | (ms) j fs (deg) j fs | y fs | fig.17 forward transfer admittance and phase as a function of frequency; typical values. amplifier a v ds = 5 v; v g2 =4v. i d = 15 ma; t amb =25 c. handbook, halfpage mgt591 10 1 10 - 1 10 - 2 10 10 2 10 3 f (mhz) y os (ms) b os g os fig.18 output admittance as a function of frequency; typical values. amplifier a v ds = 5 v; v g2 =4v. i d = 15 ma; t amb =25 c.
2001 apr 25 10 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 ampli?er a scattering parameters v ds =5v; v g2-s =4v; i d = 15 ma; t amb =25 c f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.987 - 5.12 2.67 174.07 0.0006 85.79 0.997 - 1.72 100 0.983 - 10.24 2.66 168.16 0.0012 83.27 0.996 - 3.42 200 0.976 - 20.37 2.61 156.64 0.0023 78.22 0.992 - 6.77 300 0.946 - 30.36 2.54 145.05 0.0030 73.26 0.986 - 10.12 400 0.919 - 40.15 2.47 134.13 0.0032 71.40 0.980 - 13.33 500 0.885 - 49.55 2.37 132.32 0.0029 74.34 0.972 - 16.56 600 0.851 - 58.50 2.26 113.25 0.0024 90.33 0.965 - 19.74 700 0.815 - 67.28 2.15 103.20 0.0023 129.94 0.960 - 22.90 800 0.778 - 75.03 2.02 93.78 0.0035 172.18 0.950 - 26.05 900 0.747 - 83.30 1.95 84.84 0.0070 171.55 0.951 - 29.10 1000 0.710 - 90.47 1.83 75.92 0.0104 172.88 0.947 - 32.25
2001 apr 25 11 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 dynamic characteristics amplifier b common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 12 ma; unless otherwise speci?ed. notes 1. calculated from measured s-parameters. 2. measured in fig.35 test circuit. symbol parameter conditions min. typ. max. unit ? y fs ? forward transfer admittance pulsed; t j =25 c 253040ms c ig1-ss input capacitance at gate 1 f = 1 mhz - 1.7 2.2 pf c ig2-ss input capacitance at gate 2 f = 1 mhz - 4 - pf c oss output capacitance f = 1 mhz - 0.85 - pf c rss reverse transfer capacitance f = 1 mhz - 15 30 ff f noise ?gure f = 10.7 mhz; g s = 20 ms; b s =0 - 911db f = 400 mhz; y s =y s opt - 0.9 1.5 db f = 800 mhz; y s =y s opt - 1.1 1.8 db g tr power gain f = 200 mhz; g s = 2 ms; b s =b s opt ; g l = 0.5 ms; b l =b l opt ; note 1 - 34 - db f = 400 mhz; g s = 2 ms; b s =b s opt ; g l = 1 ms; b l =b l opt ; note 1 - 30 - db f = 800 mhz; g s = 3.3 ms; b s =b s opt ; g l = 1 ms; b l =b l opt ; note 1 - 25 - db x mod cross-modulation input level for k = 1%; f w = 50 mhz; f unw = 60 mhz; note 2 at 0 db agc 90 -- db m v at 10 db agc - 92 - db m v at 40 db agc 100 105 - db m v
2001 apr 25 12 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, halfpage 02 20 0 4 8 12 16 0.4 0.8 1.2 1.6 v g1-s (v) i d (ma) mcd952 v g2-s = 4 v 2.5 v 3.5 v 3 v 2 v 1.5 v 1 v fig.19 transfer characteristics; typical values. amplifier b v ds =5v. t j =25 c. handbook, halfpage 010 24 0 8 16 2 v ds (v) i d (ma) 6 48 mcd953 v g1-s = 1.5 v 1.4 v 1.2 v 1.3 v 1.1 v 1 v 0.9 v fig.20 output characteristics; typical values. amplifier b v g2-s =4v. t j =25 c. handbook, halfpage 0 2.5 100 0 20 40 60 80 0.5 1 1.5 2 v g1-s (v) i g1 ( m a) mcd954 v g2-s = 4 v 3.5 v 3 v 2.5 v 2 v 1.5 v 1 v fig.21 gate 1 current as a function of gate 1 voltage; typical values. v ds =5v. t j =25 c. amplifier b v ds =5v. t j =25 c. handbook, halfpage 0 i d (ma) 420 40 30 10 0 20 81216 mcd955 y fs (ms) 3.5 v 2.5 v 3 v 2 v v g2-s = 4 v fig.22 forward transfer admittance as a function of drain current; typical values. amplifier b v ds =5v. t j =25 c.
2001 apr 25 13 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, halfpage 050 20 0 4 8 12 16 10 20 30 40 i g1 ( m a) i d (ma) mcd956 fig.23 drain current as a function of gate 1 current; typical values. amplifier b v ds = 5 v; v g2-s =4v. t j =25 c. handbook, halfpage 0 v gg (v) 15 16 12 4 0 8 23 4 mcd957 i d (ma) fig.24 drain current as a function of gate 1 supply voltage (= v gg ); typical values. amplifier b v ds = 5 v; v g2-s = 4 v; t j =25 c. r g1 = 120 k w (connected to v gg ); see fig.35. handbook, halfpage 0246 v gg = v ds (v) i d (ma) 20 0 16 12 8 4 mcd958 r g1 = 68 k w 82 k w 100 k w 120 k w 150 k w 220 k w 180 k w fig.25 drain current as a function of gate 1 (= v gg ) and drain supply voltage; typical values. amplifier b v g2-s = 4 v; t j =25 c. r g1 connected to v gg ; see fig.35. handbook, halfpage 0246 16 12 4 0 8 mcd959 v g2-s (v) i d (ma) 4.5 v 4 v 3 v v gg = 5 v 3.5 v amplifier b v ds = 5 v; t j =25 c. r g1 = 120 k w (connected to v gg ); see fig.35. fig.26 drain current as a function of gate 2 voltage; typical values.
2001 apr 25 14 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, halfpage 0246 40 30 10 0 20 mcd960 v g2-s (v) i g1 ( m a) 4 v 3.5 v 3 v 4.5 v v gg = 5 v fig.27 gate 1 current as a function of gate 2 voltage; typical values. amplifier b v ds = 5 v; t j =25 c. r g1 = 120 k w (connected to v gg ); see fig.35. handbook, halfpage 012 4 0 - 50 - 10 3 v agc (v) gain reduction (db) - 20 - 30 - 40 mcd961 fig.28 typical gain reduction as a function of the agc voltage; see fig.35. amplifier b v ds = 5 v; v gg = 5 v; r g1 = 120 k w ; f = 50 mhz; t amb =25 c. handbook, halfpage 0 gain reduction (db) 10 50 120 110 90 80 100 20 30 40 mcd962 v unw (db m v) fig.29 unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see fig.35. amplifier b v ds = 5 v; v gg = 5 v; r g1 = 120 k w ; f= 50 mhz; f unw = 60 mhz; t amb =25 c. handbook, halfpage 0 gain reduction (db) 10 50 16 12 4 0 8 20 30 40 mcd963 i d (ma) fig.30 drain current as a function of gain reduction; typical values; see fig.35. amplifier b v ds = 5 v; v gg = 5 v; r g1 = 120 k w ; f = 50 mhz; t amb =25 c.
2001 apr 25 15 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, halfpage mgt592 10 2 10 1 10 - 1 10 10 2 10 3 f (mhz) y is (ms) b is g is fig.31 input admittance as a function of frequency; typical values. amplifier b v ds = 5 v; v g2 =4v. i d = 12 ma; t amb =25 c. handbook, halfpage mgt593 10 3 10 2 10 1 10 10 2 10 3 f (mhz) - 10 2 - 10 - 1 j rs (deg) - 10 3 | y rs | ( m s) j rs | y rs | fig.32 reverse transfer admittance and phase as a function of frequency; typical values. amplifier b v ds = 5 v; v g2 =4v. i d = 12 ma; t amb =25 c. handbook, halfpage mgt594 10 2 10 1 - 10 2 - 10 - 1 10 10 2 10 3 f (mhz) | y fs | (ms) | y fs | j fs (deg) j fs fig.33 forward transfer admittance and phase as a function of frequency; typical values. amplifier b v ds = 5 v; v g2 =4v. i d = 12 ma; t amb =25 c. handbook, halfpage mgt595 10 1 10 - 1 10 - 2 10 10 2 10 3 f (mhz) y os (ms) b os g os fig.34 output admittance as a function of frequency; typical values. amplifier b v ds = 5 v; v g2 =4v. i d = 12 ma; t amb =25 c.
2001 apr 25 16 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 handbook, full pagewidth dut c1 4.7 nf r1 10 k w mgs315 c4 4.7 nf l1 ? 2.2 m h c3 4.7 nf r l 50 w v gg v agc v ds r gen 50 w v i r2 50 w 4.7 nf c2 r g1 fig.35 cross-modulation test set-up (for one mos-fet). ampli?er b scattering parameters v ds =5v; v g2-s =4v; i d = 12 ma; t amb =25 c f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.988 - 3.30 2.93 166.05 0.0006 87.62 0.994 - 1.45 100 0.987 - 6.60 2.92 172.11 0.0013 86.02 0.993 - 2.92 200 0.981 - 13.19 2.90 164.49 0.0025 82.03 0.990 - 5.72 300 0.969 - 19.81 2.87 156.59 0.0036 76.76 0.986 - 8.57 400 0.957 - 26.42 2.84 149.17 0.0045 73.59 0.981 - 11.32 500 0.941 - 33.04 2.79 141.47 0.0051 71.13 0.975 - 14.22 600 0.925 - 39.44 2.73 134.25 0.0054 69.07 0.971 - 17.04 700 0.907 - 45.89 2.67 126.81 0.0055 68.03 0.966 - 19.92 800 0.889 - 51.93 2.60 119.56 0.0055 68.55 0.958 - 22.77 900 0.827 - 57.82 2.54 112.70 0.0048 69.87 0.957 - 25.54 1000 0.853 - 63.24 2.46 105.72 0.0042 78.19 0.954 - 28.41
2001 apr 25 17 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 package outline references outline version european projection issue date iec jedec eiaj sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 97-02-28
2001 apr 25 18 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. data sheet status (1) product status (2) definitions objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 apr 25 19 philips semiconductors product speci?cation dual n-channel dual gate mos-fet BF1203 notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 2001 72 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, marketing communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 7 - 9 rue du mont valrien, bp317, 92156 suresnes cedex, tel. +33 1 4728 6600, fax. +33 1 4728 6638 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: philips hungary ltd., h-1119 budapest, fehervari ut 84/a, tel: +36 1 382 1700, fax: +36 1 382 1800 india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland : al.jerozolimskie 195 b, 02-222 warsaw, tel. +48 22 5710 000, fax. +48 22 5710 001 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 5f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2451, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 60/14 moo 11, bangna trad road km. 3, bagna, bangkok 10260, tel. +66 2 361 7910, fax. +66 2 398 3447 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 3341 299, fax.+381 11 3342 553 printed in the netherlands 613512/03/pp 20 date of release: 2001 apr 25 document order number: 9397 750 08296

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